Electromigration Testing System
| Capacity | 60 DUTs (20DUTs / 3 ovens) |
| Temerature | 350 °C |
| Max. Current | 20mA / 80mA |
| Source Resolution | 1mA / 10mA |
| Vendor | Qualitau |
| Characteristics | Independent temperature control of ovens available |
TDDB Testing System
| Capacity | 20DUTs |
| Temerature | 350 °C |
| Max. Voltage | 100 V |
| Source Resolution | 160 mV |
| measure Accuracy | 0.1% |
| Puls mode | AC / DC pulse |
Glove Box
| Box Size | 1725(W)x760(D)x890(H)mm |
| Chamber Vacuum | 10-3 torr |
| Moisture removal | Less than 1 PPM |
| Oxigen removal | Less than 1 PPM |
| Blow speed control | Max. 63. cfm |
| Vacuum Pump | 200. Ll/min |
RF Sputter System
| Vacuum level | 3×10-7 torr |
| Power | Max. 645W |
| Process Gas | Ar, O2 |
| Sample type | 4″ wafer |
| Target. Materials | IGZO, Mo, Ti, Cu |
| Etc | Gun 3EA(RF 2EA, DC 1EA) Co-deposition Available |
UHV Sputter System
| Vacuum level | 3×10-10 torr |
| Power | Max. 1kW |
| Process Gas | Ar, N2 |
| Sample type | 4″ wafer, Sample(2cmX2cm) |
| Target. Materials | Cu and alloy(Cu-Mg,Cu-Ru) AI and alloy(AI-No,AI-Sc) |
| Etc | Gun 3EA |
HV Sputter System
| Vacuum level | 3×10-7 torr |
| Power | Max. 600W |
| Process Gas | Ar, N2 |
| Sample type | 4″ wafer, Sample(1″x1″) |
| Target. Materials | Ta, Cr, AI, Cu |
| Etc | Gun 3 EA |
Thermal Evaporator
| Use | Film deposition |
| Vacuum level | 10 x 10-7 Torr |
| Voltage | Max. 200V |
| Process. Gas | N2 |
| Sample type | 4″ safer |
| Target materialls | Sn, Ag, AI, Cu, etc |
| Etc | 2 Boats |
MOS Multi-beam Optical System
| Use | In-situ stress measurement of thin films |
| Available curvature | ~. 10km (approx.) |
| Temperature | RT ~ 300ºC |
| Vacuum | ~ 10-6 Torr |
| Vendor | K-Space Associates(USA) |
Micro Tensile Tester
| Test force | 0 ~ ± 500 N |
| Load cell | ± 500 N |
| Piston stoke | Max. ± 10 mm |
| Frequency | Max. 100Hz |
| Test application | Tensile & fatique test, 3 point bending test, 4. point bending test |
Bending Fatigue Testing System
| Appliable Stress | Tensile bending, Compressive bending |
| Sliding Distance | 5, 10, 15, 20 mm |
| Gap | 0 ~ 50 mm |
| Moving Frequency | 0 ~ 5 Hz |
Electromigration Testing System
| Current Source | Max. 5A DC / 1~10 Hz Pulse DC |
| Measure method | 2. wire & 4 wire resistance measure (Measure. accuracy 1mΩ) |
| Test Temp | Max. 350ºC |
| Testing DUT | 8ea for DC 1 set 4ea for pulse DC 2 set |
Spray Coater
| Liquid spray volume range | 0. ~ 10 ml/min |
| Necessary gas volume range | 2 ~ 12 L/min |
| Spray Area | 200 mm x 200 mm |
| Spray Volume | 1 ml/min ~ 10ml/min |
| Heater Unit | Max. 300ºC |
| Etc | Spray X,Y reobot system, Heating& sunction unit |
Electrospinning Equipment
| Precision fluid metering pump | syringe size: 10 µl ~ 60 ml Flow rate : 0.21 µl/hr |
| High voltage generator | 30kV / 2mA |
| Flat collector | 300 mm x 300 mm |
Vacuum Probe Station
| Use | Electric characteristics or reliability test at various atmosphere(N2,H2, Vacuum) |
| Vacuum level | 3 x 10-6 Torr |
| Temperature | Max. 300ºC |
| Source Voltage | Max. 60 V |
Multi Probe Station for TDDB
| Use | TDDB test |
| Temperature | Max. 400 ºC |
| DC output | 100 fA ~ 10µA |
| Resolution | Max. 150 V (step: 100mV, Accuracy:±(0.04%+240 mV)) |
| Stability | 100 mV (Accuracy:±(0.035%+100 mV)) |
| Etc | Concidence measurement of 10 samples availiable |
RF Probe station
| 8 inch wafer | |
| Vacuum chunk | |
| X/Y/Z manual control | |
| DC to 40 GHz microwave support | |
| RF manipulator and probe tip |
RF Measure System
| Pulse generator | Frequency range 1mHz~165MHz Amplitude range 100mV ~ 3.8V Source impedance 50Ω ~ 1kΩ |
| Oscilloscope | 1GHz bandwidth Up to 4GSa/s sample rate |
| RF switching matrix system | Up to 2GHz |
| Pico ammeter |
Wafer Level Reliability Analyzer
| Use | Electro Measurement |
| Temperature | 300 ºC |
| DC output | 0 ~ 15V/7A, 0 ~ 30V/4A |
| Resolution | Program: 1mV/0.5mA, Meter: 1mV/1mA |
| Stability | Voltage:0.02% + 1mA Current: 0.1% + 1mA |
| Etc | Microprobe |
Reliability Testing Chamber
| Use | PCB ion migration |
| Temp. | -2- ~ 200 ºC (variation±0.2ºC, uniformity ±0.75ºC) |
| Humidity | 25 ~ 98 % (variation±0.5ºC, uniformity ±0.25ºC) |
| Current | 10 pA ~ 1 A |
| Voltage | 1 µV ~ 200 V |
HV Furnace
| Vacuum level | 10 x 10-7 Torr |
| Use | Heat treatment |
| Process Gas | O2, N2 |
| Sample type | Piece-like sample |
| Characteristic | Fast heat treatment available |
| Temperature | 1000 ºC |
Forced Convection Dry Oven
| Use | Super High Temp. Dry Oven |
| Power | 220 V (60 Hz, 2100 W) |
| Temp. | AMB ±0.5ºC to 350ºC (500ºC) |
| Time | 00.00 to 99 hr 59 min/min. Sec free selectable |
| Characteristic | Reliability test of Packaging sample |
Optical Microscope
| Use | Analyzing microstructure |
| Magnification | Max. x1000 |
| Resolution | 1 pA ~ 10A |
| Voltage | 1000 V |