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Electromigration behavior of advanced metallization on the structural effects for memory devices

Electromigration behavior of advanced metallization on the structural effects for memory devices

저자

Kyung-Tae Jang, Yong-Jin Park, Min-Woo Jeong, Seung-Min Lim, Han-Wool Yeon, Ju-Young Cho, Min-Gi Jin, Jin-Sub Shin, Byoung-Wook Woo, Jang-Yong Bae, Yu-Chul Hwang, and Young-Chang Joo

저널 정보

Microelectronic Engineering Corresponding, 156(97), 2016

출간연도

2016

Kyung-Tae Jang, Yong-Jin Park, Min-Woo Jeong, Seung-Min Lim, Han-Wool Yeon, Ju-Young Cho, Min-Gi Jin, Jin-Sub Shin, Byoung-Wook Woo, Jang-Yong Bae, Yu-Chul Hwang, and Young-Chang Joo, “Electromigration behavior of advanced metallization on the structural effects for memory devices”, Microelectronic Engineering Corresponding, 156(97), 2016 http://dx.doi.org/10.1016/j.mee.2016.02.012