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Structural-Relaxation-Driven Electron Doping in Amorphous Oxide Semiconductors through the Increase in Concentration of Oxygen Vacancies in the Shallow-Donor State

Structural-Relaxation-Driven Electron Doping in Amorphous Oxide Semiconductors through the Increase in Concentration of Oxygen Vacancies in the Shallow-Donor State

저자

Han-Wool Yeon, Seung-Min Lim, Jung-Kyu Jung, Hyobin Yoo, Young-Joo Lee, Ho-Young Kang, Young-Jin Park, Miyoung Kim, and Young-Chang Joo

저널 정보

NPG Asia Materials, 8(e250), 2016

출간연도

2016

Han-Wool Yeon, Seung-Min Lim, Jung-Kyu Jung, Hyobin Yoo, Young-Joo Lee, Ho-Young Kang, Young-Jin Park, Miyoung Kim, and Young-Chang Joo, “Structural-Relaxation-Driven Electron Doping in Amorphous Oxide Semiconductors through the Increase in Concentration of Oxygen Vacancies in the Shallow-Donor State”, NPG Asia Materials, 8(e250), 2016 doi:10.1038/am.2016.11