바로가기 메뉴: 본문 바로가기; 푸터 바로가기

서울대학교 미세유연소자재료 연구실SNU Nano Flexible Device Materials Lab

TOP

The simulation of copper diffusion profile in SiO2 during bias temperature stress(BTS) test

Home The simulation of copper diffusion profile in SiO2 during bias temperature stress(BTS) test

The simulation of copper diffusion profile in SiO2 during bias temperature stress(BTS) test

저자

J. -Y. Kwon, K. -S. Kim, Y.-C. Joo, and K. -B. Kim

저널 정보

Jpn. J. Appl. Phys. 41, pp. 91-101 (2002).

출간연도

2002

링크

https://link.springer.com/article/10.1557/PROC-731-W8.17

J. -Y. Kwon, K. -S. Kim, Y.-C. Joo, and K. -B. Kim, “The simulation of copper diffusion profile in SiO2 during bias temperature stress(BTS) test”, Jpn. J. Appl. Phys. 41, pp. 91-101 (2002).