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Influence of dopants on atomic migration and void formation in molten Ge2Sb2Te5 under high-amplitude electrical-pulse

Home Influence of dopants on atomic migration and void formation in molten Ge2Sb2Te5 under high-amplitude electrical-pulse

Influence of dopants on atomic migration and void formation in molten Ge2Sb2Te5 under high-amplitude electrical-pulse

저자

T.-Y. Yang, J.-Y. Cho, Y.-J. Park, Y.-C. Joo

저널 정보

Acta.Mater., 60(5), pp. 2012-2030 (2012)

출간연도

2012

링크

https://doi.org/10.1016/j.actamat.2011.12.034

T.-Y. Yang, J.-Y. Cho, Y.-J. Park, Y.-C. Joo, “Influence of dopants on atomic migration and void formation in molten Ge2Sb2Te5 under high-amplitude electrical-pulse”, Acta.Mater., 60(5), pp. 2012-2030 (2012)