바로가기 메뉴: 본문 바로가기; 푸터 바로가기

서울대학교 미세유연소자재료 연구실SNU Nano Flexible Device Materials Lab

TOP

Study on the Resistance Drift in Amorphous Ge2Sb2Te5 According to Defect Annihilation and Stress Relaxation

Home Study on the Resistance Drift in Amorphous Ge2Sb2Te5 According to Defect Annihilation and Stress Relaxation

Study on the Resistance Drift in Amorphous Ge2Sb2Te5 According to Defect Annihilation and Stress Relaxation

저자

J.-Y. Cho, T.-Y. Yang, Y.-J. Park and Young-Chang Joo

저널 정보

Electrochem. Solid. St., 15(4), pp. H81-H83 (2012)

출간연도

2012

링크

https://iopscience.iop.org/article/10.1149/2.001204esl

J.-Y. Cho, T.-Y. Yang, Y.-J. Park and Young-Chang Joo, “Study on the Resistance Drift in Amorphous Ge2Sb2Te5 According to Defect Annihilation and Stress Relaxation”, Electrochem. Solid. St., 15(4), pp. H81-H83 (2012)