The performance of semiconductor devices improves everyday and its reliability should attend with performance. Improved device technology affects scale, internal stress, and new material exploration, thereby rising new reliability problems. Our group intensively research on reliability with unique tools such as massive electrical analysis for statistical life time prediction and thermal stress analysis in thin film level. Through these experimental facilities, we focus on atomic mass transport, noble material, and transition bulk to thin film, which is industrial friendly researches such as oxide semiconductors, device interconnect, printed electrodes, thermoelectric materials, and PcRAM.